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? 2001-2012 microchip technology inc. ds21365c-page 1 tc120 features ? internal switching transistor supports 600ma output current ? external switching transistor control for output currents of 2a+ ? 300khz oscillator frequency supports small inductor size ? short circuit protection ? built-in undervoltage lockout ? 95% typical efficiency ? automatic switchover to current-saving pfm mode at low output loads ? automatic output capacitor discharge while in shutdown ? programmable soft-start ? power-saving shutdown mode ? small 8-pin sop package applications ? portable test equipment ? local logic supplies ? portable audio systems ? portable scanners ? palmtops ? electronic organizers device selection table package type general description tc120 is a 300khz pfm/pwm step-down (buck) dc/ dc regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. it uses pwm as the primary modulation scheme, but automatically converts to pfm at low output loads for greater efficiency. it requires only an external inductor, schottky diode, and two capacitors to implement a step-down converter having a maximum output current of 600ma (v in = 5v, v out = 3.3v). an external switching transistor (p-channel mosfet) can be added to increase output current capability to support output loads of 2a or more. the tc120 consumes only 55 ? a (max) of supply current (v out = 3.3v) and can be placed in shutdown mode by bringing the shutdown input (shdn ) low. during shutdown, the regulator is disabled, supply current is reduced to 2.5 ? a (max), and v out is internally pulled to ground, discharging the output capacitor. normal operation resumes when shdn is brought high. other features include a built-in under- voltage lockout (uvlo), an externally programmable soft start time, and output short circuit protection. the tc120 operates from a maximum input voltage of 10v and is available in a low-profile 8-pin sop package. functional block diagram part number output voltage (v) package operating temp. range tc120503eha 5.0 8-pin sop -40c to +85c tc120333eha 3.3 8-pin sop -40c to +85c tc120303eha 3.0 8-pin sop -40c to +85c 1 2 3 4 8 7 6 5 t c 12 0 8-pin so p extw c p c s hdn /ss v in gnd ext sense l x tc120xx03 v in extw cpc shdn/ss l x ext gnd sense c in d1 l1 v out v in c out c ss 4.7nf pwm/pfm step-down combinat ion regulator/controller
tc120 ds21365c-page 2 ? 2001-2012 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings* power supply voltage (v in ).................... -0.3v to +12v voltage on v out pin ............................... -0.3v to +12v voltage on lx, boost pins ................................... (v in ? 12v) to (v in + 0.3v) voltage on ext1, ext2, shdn pins .......................................... (-0.3v) to (v in + 0.3v) l x pin current .............................................. 700ma pk ext1, ext2 pin current ...................................50ma continuous power dissipation .........................300mw operating temperature range.............-40c to +85c storage temperature range ..............-40c to +150c *stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. tc120 electrical specifications electrical characteristics: test circuit of figure 3-1, t a = 25 ? c, v in = v r x 1.2, note 1 unless otherwise noted. symbol parameter min typ max units test conditions v out output voltage v r x 0.975 v r 0.5% v r x 1.025 v v out = 3.0v v out = 3.3v v out = 5.0v i out = 120ma (note 1) i out = 132ma i out = 200ma v in input voltage 1.8 ? 10.0 v i out max maximum output current 500 600 600 ? ? ? ? ? ? ma v out = 3.0v v out = 3.3v v out = 5.0v i in supply current ? 52 55 71 82 86 110 ? av out = 3.0v v out = 3.3v v out = 5.0v v in = v r x 1.05, no load i shdn shutdown supply current ? 1.5 2.5 ? a no load, shdn = 0v, (note 2) i lx lx pin leakage current ? ? ? 1.5 2 2.5 ? a measured at ext1 pin (note 2) no load, shdn = 0v r dson ( l x ) lx pin on resistance ? ? ? 0.69 0.64 0.44 0.94 0.85 0.58 ? v out = 3.0v v out = 3.3v v out = 5.0v v out = v r x 0.9 (note 2) v lx = v in ? 0.2v, 10 ? resistor from l x to v in , shdn = v in r exth ext1, ext2 on resistance to v in ? ? ? 38 35 24 52 47 32 ? v out = 3.0v v out = 3.3v v out = 5.0v shdn = v ih ; ext1 and ext2 connected to 200 ? load, v ext1 = v ext2 = (v in ? 0.4v); v out = v in (note 2) r extl ext1, ext2 on resistance to gnd ? ? ? 31 29 20 41 37 26 ? v out = 3.0v v out = 3.3v v out = 5.0v shdn = v ih ; ext1 and ext2 pulled up through a series resistance of 200 ?? to a voltage such that vext1, 2 = 0.4v f osc oscillator frequency 255 300 345 khz measured at ext1 pin, v in = v out + 0.3v, i out = 20ma (note 3) d pwm maximum pwm duty cycle ? ? 100 % d pfm pfm duty cycle 15 25 35 % no load ? efficiency ? 95 ? % v in > v r x 1.2 note 1: v r is the factory-programmed output voltage setting. 2: no external components connected, except c ss. 3: while operating in pwm mode.
? 2001-2012 microchip technology inc. ds21365c-page 3 tc120 electrical characteristics: test circuit of figure 3-1, t a = 25 ? c, v in = v r x 1.2, note 1 unless otherwise noted. symbol parameter min typ max units test conditions v uvlo minimum operating voltage 0.9 ? 1.8 v v out = v r x 0.9 (note 2), shdn = v in measured with internal transistor in off state and v in falling v ih shdn input logic high, threshold voltage 0.65 ? ? v v out = 0v, (note 2) v il shdn input logic low, threshold voltage ? ? 0.20 v v out = 0v, (note 2) t pro short circuit protection response time 3 5 8 msec time from v out = 0v to shdn = v il (note 2) t ss soft start time 6 10 16 msec note 1: v r is the factory-programmed output voltage setting. 2: no external components connected, except c ss. 3: while operating in pwm mode.
tc120 ds21365c-page 4 ? 2001-2012 microchip technology inc. 2.0 pin descriptions the descriptions of the pins are listed in table 2-1. table 2-1: pin function table pin no. (8-pin sop) symbol description 1v in unregulated supply input. 2 extw extended external switching transistor drive output. this output follows the timing on the ext output with an additional 100nsec blanking time on both the leading and trailing edges. that is, this output transitions from high-to-low 100 nsec prior to the same transition on ext; and transitions low-to-high 100nsec after the same transition on ext; resulting in a longer external switch on time. (see section 3.9 external switching transistor selection ). 3 cpc charge pump capacitor input. an inverting charge pump is formed by attaching a capacitor and diode to this input. (see section 3.5 improving high load efficiency in regulator operating mode ). 4 shdn /ss shutdown and soft-start control input. a soft star t capacitor of 100pf (min) must be connected to this input. the soft start capacitor is charged by an internal ? a current source that gently ramps the tc120 into service. shutdown control is bes t implemented with an external open collector (or open drain) switch. the tc120 enters shutdown w hen this input is low. during shutdown, the regulator is disabled, and supply current is reduced to less than 2.5 ? a. normal operation is restored when this input is open-circuited, and allowed to float high. (see section 3.6 low power shutdown mode/soft start input ). 5 sense voltage sense input. this input must be connected to the output voltage node at the physical location that requires the tightest voltage regulation. 6 gnd ground terminal. 7 ext external switching transistor drive output. this out put connects directly to the gate of an external p-channel mosfet for applications requiring output currents greater than 600ma. the timing of this output exactly matches that of the gate drive for the internal p-channel transistor. this output can drive a maximum capacitance of 1000pf. (see section 3.9 external switching transistor selection ). 8 lx inductor terminal. this pin is connected to the dr ain of the internal p-channel switching transistor. if the tc120 is operated as a regulator (i.e., using the internal switch); the inductor must be connected between this pin and the sense pin.
? 2001-2012 microchip technology inc. ds21365c-page 5 tc120 3.0 detailed description the tc120 can be operated as an integrated step- down regulator (using the internal switching transistor); or as a step-down regulator controller (using an external switching transistor). when operating as an integrated regulator, the only required external compo- nents are a schottky diode, inductor and an output capacitor. operating in this configuration, the tc120 is capable of supporting output load currents to a maximum of 600ma with operating efficiencies above 85%. efficiencies at high loads can be further improved by using the on-board charge pump circuit to pull the gate of the internal switching transistor below ground for the lowest possible on resistance. (for more infor- mation, see section 3.5 improving high load efficiency in regulator operating mode ). higher output currents are achieved by operating the tc120 with an external p-channel switching transistor (controller mode). in this operating configuration, the maximum output current is determined primarily by the on resistance of the p-channel switch and the series resistance of the inductor. figure 3-1: test circuit 3.1 inductor selection selecting the proper inductor value is a trade-off between physical size and power conversion require- ments. lower value inductors cost less, but result in higher ripple current and core losses. they are also more prone to saturate since the coil current ramps faster and could overshoot the desired peak value. this not only reduces efficiency, but could also cause the current rating of the external components to be exceeded. larger inductor values reduce both ripple current and core losses, but are larger in physical size and tend to increase the start-up time slightly. a 22 ? h inductor is the best overall compromise and is recom- mended for use with the tc120. for highest efficiency, use inductors with a low dc resistance (less than 20m ? ). to minimize radiated noise, consider using a toroid, pot core or shielded-bobbin inductor. 3.2 input bypass capacitor using an input bypass capacitor reduces peak current transients drawn from the input supply, and reduces the switching noise generated by the regulator. the source impedance of the input supply determines the size of the capacitor that should be used. 3.3 output capacitor the effective series resistance of the output capacitor directly affects the amplitude of the output voltage ripple. (the product of the peak inductor current and the esr determines output ripple amplitude.) there- fore, a capacitor with the lowest possible esr should be selected. smaller capacitors are acceptable for light loads or in applications where ripple is not a concern. a 47 ? f tantalum capacitor is recommended for most applications. the sprague 595d series of tantalum capacitors are amongst the smallest of all low esr surface mount capacitors available. table 3-1 lists suggested components and suppliers. 3.4 catch diode the high operating frequency of the tc120 requires a high-speed diode. schottky diodes such as the ma737 or 1n5817 through 1n5823 (and the equivalent surface mount versions) are recommended. select a diode whose average current rating is greater than the peak inductor current; and whose voltage rating is higher than v in max . 3.5 improving high load efficiency in regulator operating mode if the tc120 is operated at high output loads most (or all) of the time, efficiency can be improved with the addition of two components. ordinarily, the voltage swing on the gate of the internal p-channel transistor is from ground to v in . by adding a capacitor and diode as shown in figure 3-2, an inverting charge pump is formed, enabling the internal gate voltage to swing from a negative voltage to +v in . this increased drive lowers the r ds on of the internal transistor, improving efficiency at high output currents. care must be taken to ensure the voltage measured between v in and cpc does not exceed an absolute value of 10v. while this is not a problem at values of v in at (or below) 5v, higher v in values will require the addition of a clamping mechanism (such as a zener diode) to limit the voltage as described. while this technique improves efficiency at high output loads, it is at the expense of low load efficiency because energy is expended charging and discharging the charge pump capacitor. this technique is therefore not recommended for applications that operate the tc120 at low output currents for extended time periods. if unused, cpc must be grounded. tc120xx03 v in extw cpc shdn/ss l x ext gnd sense 47 f/10v tantalum c ss 4.7nf in5817 l1 22 h v out v in c out 47 f/10v tantalum + ? + ?
tc120 ds21365c-page 6 ? 2001-2012 microchip technology inc. 3.6 low power shutdown mode/soft start input the shdn /ss input acts as both the shutdown control and the node for the external soft start capacitor, which is charged by an internal 1 ? a current source. a value of 4700pf (100pf minimum) is recommended for the soft start capacitor. failure to do this may cause large overshoot voltages and/or large inrush currents result- ing in possible instability. the tc120 enters a low power shutdown mode when shdn /ss is brought low. while in shutdown, the oscillator is disabled and the output discharge switch is turned on, discharging the output capacitor. figure 3-3 shows the recommended interface circuits to the shdn /ss input. as shown, the shdn /ss input should be controlled using an open collector (or open drain) device, such that the shdn / ss input is grounded for shutdown mode, and open- circuited for normal operation (figure 3-3a). if a cmos device is used to control shutdown (figure 3-3b), the value of r1 and c ss should be chosen such that the voltage on shdn /ss rises from ground to 0.65v in 1.5msec (figure 3-4). if shutdown is not used, c ss must still be connected as shown in figure 3-3c and figure 3-3d. shdn /ss may be pulled up with a resistor (figure 3-3c) as long as the values of r ss and c ss provide the approximate charging characteristic on power up shown in figure 3-4. c ss only may also be connected as shown in figure 3-3d with c ss chosen at 4700pf (minimum 100pf). 3.7 undervoltage lockout (uvlo) the tc120 is disabled whenever v in is below the undervoltage lockout threshold. this threshold is equal to the guaranteed minimum operating voltage for the tc120 (i.e., 2.2v). when uvlo is active, the tc120 is completely disabled. 3.8 short circuit protection upon detection of an output short circuit condition, the tc120 reduces the pwm duty cycle to a minimum value using its internal protection timer. the sequence of events is as follows: when an output voltage decrease to near zero is detected (as the result of an overload), the internal (5msec) protection timer is started. if the output voltage has not recovered to nominal value prior to the expiration of the protection timer, the tc120 is momentarily shut down by dedicated, internal circuitry. immediately following this action, the soft start sequence is engaged in an attempt to re-start the tc120. if the output short circuit is removed, normal operation is automatically restored. if the short circuit is still present, the timed self-shutdown sequence described above is repeated. 3.9 external switching transistor selection ext is a complimentary output with a maximum on resistances of 32 ? to v dd when high and 26 ? to ground when low, at v out = 5v. it is designed to directly drive a p-channel mosfet (figure 3-5). the p-channel mosfet selection is determined mainly by the on-resistance, gate-source threshold and gate charge requirements. also, the drain-to-source and gate-to-source breakdown voltage ratings must be greater than v in max . the total gate charge specification should be less than 100nc for best efficiency. the mosfet must be capable of handling the required peak inductor current, and should have a very low on- resistance at that current. for example, a si9430 mosfet has a drain-to-source rating of -20v, and a typical on-resistance r ds on of 0.07 ? at 2a, with v gs = -4.5v. (extw (figure 3-6) may be gated with external circuitry to add blanking, or as an auxiliary timing signal.) table 3-1 lists suggested components and suppliers. 3.10 board layout guidelines as with all inductive switching regulators, the tc120 generates fast switching waveforms, which radiate noise. interconnecting lead lengths should be minimized to keep stray capacitance, trace resistance and radiated noise as low as possible. in addition, the gnd pin, input bypass capacitor and output filter capacitor ground leads should be connected to a single point. the input capacitor should be placed as close to power and ground pins of the tc120 as possible. the length of the ext trace must also be kept as short as possible.
? 2001-2012 microchip technology inc. ds21365c-page 7 tc120 table 3-1: suggested components and suppliers figure 3-2: tc120 with added components for improved efficiency at high output currents type inductors capacitors diodes transistors surface mount sumida cd54 series cdrh series coilcraft do series avx tps series sprague 595d series on semiconductor mbrs340t3 nihon nsq series matsushita ma737 silconix little foot mosfet series zetex fzt749 pnp bipolar transistor toshiba 2sa1213 pnp transistor miniature through-hole sumida rch series sanyo os-con series irc oar series standard through-hole coilcraft pch series nichicon pl series united chemi-conv lxf series on semiconductor tmos power mosfets tc120xx03 v in extw cpc shdn/ss l x ext gnd sense d 1 in5817 a) for v in 5v c p 2200 pf ceramic tc120xx03 v in extw cpc shdn/ss l x ext gnd sense d 1 in5817 b) for v in > 5v c p 2200 pf ceramic 10v zener diode v in 5v v in > 5v
tc120 ds21365c-page 8 ? 2001-2012 microchip technology inc. figure 3-3: shutdown control circuits figure 3-4: soft start timing shdn/ss tc120xx03 c ss shdn/ss tc120xx03 c ss shdn/ss tc120xx03 c ss 4.7nf shdn/ss tc120xx03 r ss v in shdn on off 47k 2n2222 c ss 4.7nf r 1 v in cmos gate a) using an open collector device b) using a complementary output device c) shutdown not used ? with pull-up d) shutdown not used ? no pull-up shdn on off off on 0.65v 0v 1.5msec shdn/ss shutdown signal x
? 2001-2012 microchip technology inc. ds21365c-page 9 tc120 figure 3-5: using external transistor switch figure 3-6: external (ext) and ex tended external (extw) switching transistor drive output tc120xx03 v in extw cpc l x ext gnd sense shdn/ss c ss 4.7 nf in5817 l1 22 h v out v in c in 47 f tantalum c out 47 f tantalum ext extw 100nsec 100nsec
tc120 ds21365c-page 10 ? 2001-2012 microchip technology inc. 4.0 packaging information 4.1 package marking information package marking data not available at this time. 4.2 taping form 4.3 package dimensions component taping orientation for 8-pin sop devices package carrier width (w) pitch (p) part per full reel reel size 8-pin sop 12 mm 8 mm 1000 7 in carrier tape, number of components per reel and reel size pin 1 user direction of feed standard reel component orientation for tr suffix device w p 8-pin sop .181 (4.60) .165 (4.20) .217 (5.50) .193 (4.90) .069 (1.75) .055 (1.40) .008 (0.20) .000 (0.00) .020 (0.50) .012 (0.30) .256 (6.50) .232 (5.90) pin 1 .010 (0.25) .004 (0.10) .018 (0.45) .014 (0.35) 8 max. .051 (1.30) .049 (1.24) dimensions: inches (mm) note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2001-2012 microchip technology inc. ds21365c-page 11 tc120 5.0 revision history revision c (november 2012) added a note to the package outline drawing.
tc120 ds21365c-page 12 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21365c-page13 tc120 sales and support data sheets products supported by a preliminary data sheet may have an e rrata sheet describing minor operational differences and recom- mended workarounds. to determine if an erra ta sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products.
tc120 ds21365c-page14 ? 2001-2012 microchip technology inc. notes:
? 2001-2012 microchip technology inc. ds21365c-page 15 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mtp, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. analog-for-the-digital age, app lication maestro, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, sqi, serial quad i/o, total endurance, tsharc, uniwindriver, wiperlock, zena and z-scale are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. gestic and ulpp are registered trademarks of microchip technology germany ii gmbh & co. & kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2001-2012, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 9781620767498 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 ==
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